Example: Patent Landscape on Gallium Nitride (GaN) LEDs 

Summary of the Study: GaN-Based LED Lighting Systems 💡🔬📘

Artificial lighting has advanced from oil lamps (0.1 lm/W) to incandescent (15 lm/W), fluorescent (70 lm/W), and now to highly efficient LEDs producing 200–300 lm/W. A breakthrough occurred with the development of blue light-emitting diodes (LEDs) using Gallium Nitride (GaN)—a discovery that earned the 2014 Nobel Prize in Physics.

Patent activity in GaN-based lighting systems began as early as 1971, highlighting the long-standing innovation in this domain. Notably:

• US Patent 3683240 (filed in 1971 by Issac) discloses a crystalline GaN electroluminescent semiconductor device.

• JP Patent 933472C (1974), JP 19750119993 and JP 19750109889 (both 1975) also claim GaN-based light-emitting systems.

A review of global patent filings reveals over 13,000 patent families referencing terms such as Gallium Nitride, GaN, azanylidynegallane, and LEDs. Approximately 6,000+ patent families contain these terms in titles and abstracts, underscoring strong and sustained innovation in this technology.

The GaN semiconductor device market, valued at $16.5B in 2016, is projected to reach $22.5B by 2023, driven by use in power electronics, RF systems, lighting, and laser applications.

To support innovators in this field, Mark IP has developed a detailed and customizable Patent Landscape Report (PLR) on GaN-based LED lighting systems, providing strategic insights for R&D, patenting, and market positioning. 🧠📊📄